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A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain

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Conference

2015 ASEE Annual Conference & Exposition

Location

Seattle, Washington

Publication Date

June 14, 2015

Start Date

June 14, 2015

End Date

June 17, 2015

ISBN

978-0-692-50180-1

ISSN

2153-5965

Conference Session

Circuits and Systems Education 3

Tagged Division

Electrical and Computer

Page Count

14

Page Numbers

26.84.1 - 26.84.14

DOI

10.18260/p.23425

Permanent URL

https://peer.asee.org/23425

Download Count

109

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Paper Authors

biography

James E. Globig University of Dayton

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Prof. Globig joined the University of Dayton in August 1998. Before becoming a member of the faculty, Prof. Globig was Vice President of Research and Product Development at YSI Inc. Jim’s expertise is in product development and engineering management. He combines strong leadership experience with broad-based engineering expertise. Jim is an excellent communicator with a history of building high performance cross-functional teams to achieve on schedule, on budget release of high quality new products. He demonstrates an in-depth understanding of and ability to execute the product development process. Jim is experienced in analog and digital electronics and also in manufacturing and automation engineering. He has successfully refocused his career from developing new products to developing new engineers. Professor Globig teaches courses in Electronic Engineering Technology, primarily in the areas of analog electronics and data acquisition systems.

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Abstract

A Practical Approach to Designing MOSFET Amplifiers for a Specific GainMetal Oxide Semiconductor Field Effect Transistors (MOSFETs) are primarily recognized fortheir use as a solid state switch. They are often overlooked as amplifiers because, despite severaladvantages over Bipolar Junction Transistors (BJTs), they are seen as devices that can onlydeliver single digit voltage gains. Even though calculating the gain for a MOSFET amplifierdesign is a well understood exercise, designing a MOSFET amplifier for a specified, moderatelyhigh gain at the outset is not. This is because the gain parameter of a MOSFET, itstransconductance, is both a function of, and interacts with, its bias point. This paper reinforcesthe Problem Definition, Paper Design, Validation, and Verification engineering process with astep-by-step method to design a modern MOSFET amplifier to a specific, moderately highvoltage gain. Instead of the “design the amplifier, analyze it to determine its gain, and modify”iterative process, this approach greatly reduces the empirical nature of the typical FET Amplifierdesign process taught in text books by introducing the engineering student to a comprehensiblemethod to approximate the desired voltage gain on the first iteration.

Globig, J. E. (2015, June), A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain Paper presented at 2015 ASEE Annual Conference & Exposition, Seattle, Washington. 10.18260/p.23425

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