Guvench, M. G., & Richardson, D. (2011, June), Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use  Paper presented at 2011 ASEE Annual Conference & Exposition, Vancouver, BC. 10.18260/1-2--18689

\bibitem{asee_peer_18689}
  Guvench, M. G., \& Richardson, D. (2011, June), \emph{Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use}
  Paper presented at 2011 ASEE Annual Conference \& Exposition, Vancouver, BC.
  10.18260/1-2--18689

Mustafa G. Guvench and Derek Richardson.  "Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use".  2011 ASEE Annual Conference & Exposition, Vancouver, BC, 2011, June.  ASEE Conferences, 2011.  https://peer.asee.org/18689 Internet.  19 Sep, 2024

\bibitem{asee_peer_18689}
  Mustafa G. Guvench and Derek Richardson.
  "Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use".
  \emph{2011 ASEE Annual Conference \& Exposition, Vancouver, BC, 2011, June}.
  ASEE Conferences, 2011.
  https://peer.asee.org/18689 Internet.  19 Sep, 2024

@INPROCEEDINGS{asee_peer_18689
author = "Mustafa G. Guvench and Derek Richardson"
title = "Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use"
booktitle = "2011 ASEE Annual Conference \& Exposition"
year = "2011"
month = "June"
address = "Vancouver, BC"
publisher = "ASEE Conferences"
note = {https://peer.asee.org/18689}
number = {10.18260/1-2--18689}
}

TY  - CPAPER
AB  -               Microwave Plasma Cleaner Design for Semiconductor              Fabrication and Materials Processing Laboratory UseAbstractPlasma etching is a common application used to remove organic surface contamination byexposing surfaces to an energetic radical species consisting of photons, electrons, ions, andreactive neutral species. Being a dry process which does not involve acids and VOC solvents, itis preferred in semiconductor wafer fabrication and chip bonding. The particles are energizedand bombard the surface to cause sputtering, thermal evaporation, chemical reaction, andphotodecomposition. Typically in engineering applications plasma is created via a supply gas(oxygen, argon or a mixture) under vacuum which is exposed to RF (Radio Frequency) signals at13.56MHz to provide the ionizing energy necessary for reactions. However, such equipment tendto be expensive. In our work we made use of microwave power available at 2.45GHz providedfrom a household microwave to produce the same energizing reactions. This method provides amuch more viable and cost-effective solution for non-industrial plasma cleaning applicationssuch as in university laboratories for education and research.In our design the plasma and the sample to be cleaned are contained in a Pyrex chamber whichresides inside the standard microwave oven. Vacuum and supply gas connections are terminatedat the base plate of the vacuum chamber which exits the bottom of the microwave. The plasmacan be controlled via duty-cycle variation of the microwave source operating at 1000W as wellas the vacuum level, supply gas composition and flow-rates. Plasma composition and pressureare monitored by two gas flow meters with needle valves and a thermocouple vacuum gauge.We would like to share our successful design and experience with the engineering andtechnology faculty and students from other institutions as an inexpensive in-house fabricatedalternative to expensive RF powered plasma processing equipment for use in their semiconductorfabrication, chemical and materials engineering laboratories.
AU  - Mustafa G. Guvench
AU  - Derek Richardson
CY  - Vancouver, BC
DA  - 2011/06/26
PB  - ASEE Conferences
TI  - Microwave Plasma Cleaner Design for Semiconductor Fabrication and Materials Processing Laboratory Use
UR  - https://peer.asee.org/18689
DO  - 10.18260/1-2--18689
ER  -