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Research Experiences For Undergraduate Women Students In High Speed Integrated Circuits

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2000 Annual Conference


St. Louis, Missouri

Publication Date

June 18, 2000

Start Date

June 18, 2000

End Date

June 21, 2000



Page Count


Page Numbers

5.529.1 - 5.529.7

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Paper Authors

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Stephanie Weitemeyer

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Stephanie Draeger

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Rebecca Morrison

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Lehang Huynh

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Ashok K. Goel

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Sarah Bergstrom

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Jami Meteer

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Aleli Mojica-Campbell

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Martha Sloan

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NOTE: The first page of text has been automatically extracted and included below in lieu of an abstract

Session 3592

Research Experiences for Women Undergraduate Students in High-Speed Integrated Circuits

Ashok Goel, Martha Sloan, Sarah Bergstrom, Aleli Mojica-Campbell, Stephanie Draeger, Lehang Huynh, Jami Meteer, Rebecca Morrison and Stephanie Weitemeyer

Department of Electrical Engineering Michigan Technological University


In this paper, the research projects carried out by the women undergraduate students selected for the NSF funded undergraduate summer research sites established at the department of Electrical Engineering at Michigan Technological University in the areas of design, modeling and simulation of GaAs-based very high-speed integrated circuits are outlined.

I. Introduction

It is widely accepted that active research experience is one of the most effective techniques for training and motivating undergraduate students for careers in science and engineering. National Science Foundation (NSF) recognizes this and supports undergraduate research under two “Research Experiences for Undergraduates” (REU) programs: a) Under their “REU Supplements” program, NSF encourages principal investigators of NSF-funded research grants to include one or two undergraduate students in their existing projects; b) Under their “REU Site” program, NSF provides funds to set up undergraduate research sites consisting of nearly ten students to work on state-of-the-art research projects under the super- vision of a faculty member.

Recent advances in the integrated circuit technology have resulted in smaller transistor dimensions, larger chip sizes and increased complexity. There is an increasing demand for circuits with higher speeds and higher component densities. Because of its semi-insulating property and the fact that the mobility of electrons is an order of magnitude higher in Gallium Arsenide (GaAs) substrate than in the widely used Silicon substrate, GaAs has emerged as a preferred substrate for the development of very high-speed integrated circuits. In fact, during the last few years, GaAs technology has emerged rapidly from basic research to device and circuit development. In addition, growth of GaAs on silicon (Si) substrate has met with a great deal of interest because of its potential applications in the new hybrid technologies. GaAs-on-Si unites the high speed and optoelectronic capability of GaAs circuits with the low material cost and superior mechanical properties of the Si substrate. The heat sinking of such devices is better since the thermal conductivity of Si is three times more than that of GaAs. This technology is expanding rapidly from material research to device and circuit develop- ment. Functional GaAs SRAMs of up to 1K in complexity have been demonstrated on Si sub-

Weitemeyer, S., & Draeger, S., & Morrison, R., & Huynh, L., & Goel, A. K., & Bergstrom, S., & Meteer, J., & Mojica-Campbell, A., & Sloan, M. (2000, June), Research Experiences For Undergraduate Women Students In High Speed Integrated Circuits Paper presented at 2000 Annual Conference, St. Louis, Missouri.

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