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Session 1532

Undergraduate Research in the Modeling and Simulation of GaAs-Based High-Speed Circuits

Ashok Goel, Martha Sloan, Jason Decker, Stephanie Draeger, Trevor Dupras, Nuri Eady, Jeff Espenschied, Eugene Lee, Rebecca Morrison, Nicholas Sze, Paul Toth and Stephanie Weitemeyer

Department of Electrical & Computer Engineering Michigan Technological University Houghton, MI 49931

Abstract An undergraduate research site in the area of modeling and simulation of GaAs-based high-speed circuits is described. Undergraduate students worked with electrical engineering graduate students and faculty members for ten weeks on projects ranging from designing & study of GaAs-based circuits using MAGIC and L-Edit to modeling the very high-frequency effects and parasitic capacitances in the GaAs-based VLSI interconnections to computer simulations of GaAs-and SOI-based devices and circuits using the semiconductor TCAD tools. In this paper, the undergraduate research projects carried out by the REU students are summarized

1. Introduction

It is widely recognized that active research experience is one of the most effective techniques for training and motivating undergraduate students for careers in science and engineering. In the USA, National Science Foundation (NSF) recognizes this and supports undergraduate research under two programs: a) Under their “Research Experiences for Undergraduates (REU) Supplements” program, NSF encourages principal investigators of NSF-funded research grants to include one or two undergraduate students in their existing projects; and b) Under their “REU Site” program, NSF provides funds to set up undergraduate research sites consisting of nearly ten students to work on state-of-the-art research projects under the supervision of a faculty member.

Continuous advances in integrated circuit technology have resulted in smaller transistor dimensions, larger chip sizes and increased complexity. There is an increasing demand for circuits with higher speeds and higher component densities. Because of its semi- insulating property and the fact that the mobility of electrons is an order of magnitude higher in Gallium Arsenide (GaAs) substrate than in the widely used Silicon substrate, GaAs has emerged as a preferred substrate for the development of very high-speed integrated circuits [1, 2]. In fact, during the last few years, GaAs technology has emerged

“Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright 2003, American Society for Engineering Education”

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Sloan, M., & Goel, A. (2003, June), Undergraduate Research In The Modeling And Simulation Of Gaas Based High Speed Circuits Paper presented at 2003 Annual Conference, Nashville, Tennessee. 10.18260/1-2--12599