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Use Of Simulation Postprocessor Goal Function Constructs For A Simple And Efficient Exposition Of 2 Terminal, 3 Terminal And 4 Terminal Mos Device Characteristics

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Conference

2005 Annual Conference

Location

Portland, Oregon

Publication Date

June 12, 2005

Start Date

June 12, 2005

End Date

June 15, 2005

ISSN

2153-5965

Conference Session

Emerging Trends in Engineering Education Poster Session

Page Count

10

Page Numbers

10.1391.1 - 10.1391.10

Permanent URL

https://peer.asee.org/15049

Download Count

17

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Paper Authors

author page

Raymond Winton

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Abstract
NOTE: The first page of text has been automatically extracted and included below in lieu of an abstract

Session 2476

Use of simulation postprocessor goal function constructs for a simple and efficient exposition of 2-terminal, 3-terminal and 4-terminal MOS device characteristics Raymond S. Winton, Member ASEE Department of Electrical and Computer Engineering, Mississippi State University

Abstract

Traditional device physics courses lead the student and professor through a maze of physics and mathematics that often displace the device from its principal purpose, that of a circuit component. For small geometry devices the fields can be very intense and so can the engineers that try to navigate the model descriptors without a good roadmap. The great majority of VLSI design engineers have little or no grasp of the physics behind the device, and in many instances, circuit designers tend to fly blind because the model descriptors on which they rely are only envisioned as a black art.

However a natural vehicle exists for instruction in semiconductor device physics that is seldom used by the textbook resources and device theorists. The overlooked vehicle is the circuit simulation utility. But it is designed for use as a circuit simulation platform, not as a device descriptor. Via parameterization techniques and a framework of ideal elements, a number of very effective constructs have been developed under a course taught at MSU that addresses and explains semiconductor device physics, even when the underlying physical model is not well known. These constructs can also address and parameterize circuit macros, and as such, also become of collateral value as a circuit design tool.

As result of the evolution of simulation tools, simulation postprocessors usually now include goal function options that lend considerable versatility to both the circuit designer and the instructor of circuit designers. This paper identifies particular goal functions that are of considerable merit for the exposition of the MOS device, and the necessary circuit constructs to represent it in terms of 2-terminal, 3-terminal, and four-terminal device constructs and the underlying physical expositions that are verified by the simulations. The student version of ORCAD/pSPICE, which is the most common classroom circuit simulation platform, is the vehicle that is used as the semiconductor device descriptor for the MSU course in semiconductor devices.

Winton, R. (2005, June), Use Of Simulation Postprocessor Goal Function Constructs For A Simple And Efficient Exposition Of 2 Terminal, 3 Terminal And 4 Terminal Mos Device Characteristics Paper presented at 2005 Annual Conference, Portland, Oregon. https://peer.asee.org/15049

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